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Hafnium dioxide (HfO₂) has the following properties:
1. Physical characteristics:
• Appearance: white powder at room temperature and pressure.
• Crystal structure: there are three crystal structures, monoclinic, tetragonal and cubic, and the density is slightly different under different crystal structures, about 10.3g/cm³, 10.1g/cm³ and 9.68g/cm³ respectively (there are slight differences in different literature data).
• Melting point and boiling point: the melting point is between 2780K and 2920K (about 2507 ° C to 2647 ° C), and the boiling point is 5400K (about 5127 ° C), which has a high melting boiling point and belongs to high temperature resistant materials.
• Coefficient of thermal expansion: The coefficient of thermal expansion is 5.8×10⁻⁶/℃, the coefficient of thermal expansion is small, and the size change is relatively small when the temperature changes.
2. Chemical properties:
• Solubility: insoluble in water, hydrochloric acid and nitric acid, which reflects its chemical stability in common acids, but soluble in concentrated sulfuric acid and hydrofluoric acid.
Chemical reactivity: Relatively inert and does not react easily with other substances in general, but under certain conditions, such as reaction with hot concentrated sulfuric acid or acid sulfate forms hafnium sulfate [Hf(SO₄)₂];When mixed with carbon and heated through chlorine, it forms hafnium tetrachloride (HfCl₄).₆ Potassium fluosilicate was formed. Potassium fluosilicate was formed. (K₂HfF₆).
3. Electrical characteristics:
• High dielectric constant:Hafnium dioxide is a ceramic material with a high dielectric constant, which makes it an important application in the field of microelectronics, where it can be used to replace the gate insulation layer of metal oxide semiconductor field effect tubes (MOSFET) in traditional silicon-based integrated circuits.To solve the problem of the development size limit of traditional SiO₂/Si structure in current MOSFET.
• Wide-band gap: It has a wide-band gap, which enables it to play a good insulation and isolation role in electronic devices, helping to improve the performance and stability of electronic devices.
4. Other features:
• Anti-radioactivity: It can be used to make anti-radioactivity coatings, and has application value in some places or equipment where radioactive protection is required.
• Optical properties: It has certain applications in the optical field, such as being used to make optical glass, UV anti-reflection film, interference film, etc., with high refractive index and other optical properties.
Hafnium dioxide (HfO₂) has the following properties:
1. Physical characteristics:
• Appearance: white powder at room temperature and pressure.
• Crystal structure: there are three crystal structures, monoclinic, tetragonal and cubic, and the density is slightly different under different crystal structures, about 10.3g/cm³, 10.1g/cm³ and 9.68g/cm³ respectively (there are slight differences in different literature data).
• Melting point and boiling point: the melting point is between 2780K and 2920K (about 2507 ° C to 2647 ° C), and the boiling point is 5400K (about 5127 ° C), which has a high melting boiling point and belongs to high temperature resistant materials.
• Coefficient of thermal expansion: The coefficient of thermal expansion is 5.8×10⁻⁶/℃, the coefficient of thermal expansion is small, and the size change is relatively small when the temperature changes.
2. Chemical properties:
• Solubility: insoluble in water, hydrochloric acid and nitric acid, which reflects its chemical stability in common acids, but soluble in concentrated sulfuric acid and hydrofluoric acid.
Chemical reactivity: Relatively inert and does not react easily with other substances in general, but under certain conditions, such as reaction with hot concentrated sulfuric acid or acid sulfate forms hafnium sulfate [Hf(SO₄)₂];When mixed with carbon and heated through chlorine, it forms hafnium tetrachloride (HfCl₄).₆ Potassium fluosilicate was formed. Potassium fluosilicate was formed. (K₂HfF₆).
3. Electrical characteristics:
• High dielectric constant:Hafnium dioxide is a ceramic material with a high dielectric constant, which makes it an important application in the field of microelectronics, where it can be used to replace the gate insulation layer of metal oxide semiconductor field effect tubes (MOSFET) in traditional silicon-based integrated circuits.To solve the problem of the development size limit of traditional SiO₂/Si structure in current MOSFET.
• Wide-band gap: It has a wide-band gap, which enables it to play a good insulation and isolation role in electronic devices, helping to improve the performance and stability of electronic devices.
4. Other features:
• Anti-radioactivity: It can be used to make anti-radioactivity coatings, and has application value in some places or equipment where radioactive protection is required.
• Optical properties: It has certain applications in the optical field, such as being used to make optical glass, UV anti-reflection film, interference film, etc., with high refractive index and other optical properties.
